In this work, we demonstrate a two-dimension MoS 2 -based reconfigurable analog hardware that emulate synaptic, heterosynaptic, and somatic functionalities. The inner-states and inter-connections of all modules co-encode versatile functions such as analog-to-digital/digital-to-analog conversion, and ...
A similar 3D/2D vertical TFET structure has been reported based on the tri-layer (3 L) MoS2 channel and Silicon (Si) source. The Si/3L-MoS2-TFET demonstrated a minimum SS of 15 mV per decade at room temperature while maintaining an on-state current above 1 µA/µm136. Ther...
ab initio or first principle calculations based on density functional theory (DFT) are emerged to be a crucial technique in exploring and analyzing the properties of 2D materials and their correlation with different external influences, which satisfactorily complementing the current experimental observations...
Under photovoltaic diode mode, the reconfigurable optical responsivity modulated by gatesVG1andVG2is the basis for realizing CSRF. WhenVG1andVG2have the same values and opposite signs, theID–VDcurves (Fig. S4b) under the illumination of red–green–blue light (637 nm/520 nm/455 nm,...
Fabrication of 2D semiconductors-based CMOS devices via transfer-based approach.an-MoS2and a p-type WSe2flakes placed nearby on a SiO2/p+-Si substrate using mechanical exfoliation and imprint-transfer-based approach. Circuit layout and the schematic diagram of the fabricated CMOS device. The 3D ...
Double-gate MoS2 field-effect transistors with full-range tunable threshold voltage for multifunctional logic circuits Adv. Mater., 33 (2021), p. e2101036, 10.1002/adma.202101036 Google Scholar 45 P. Wu, D. Reis, X.S. Hu, J. Appenzeller Two-dimensional transistors with reconfigurable polarit...
Table 3. 2D heterojunction-based p-n junctions as follows. HeterojunctionsMaterials p/nThickness (nm)Rectification ratioVoc (V)References Vertical WSe2/MoS2 1 L/1 L 50 0.55 [215] WSe2/MoS2 1 L/1 L 50 0.5 [216] WSe2/MoS2 2 L/13 L 15 0.27 [218] BP/MoS2 11...
Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions Vertically stacked van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of... B Wang,S Yang,C ...
In addition, one can realize multifunctional vdW HS-based devices by leveraging different properties within the same structure [147–157]: for example, MoS2/h-BN/graphene HS can serve as both random access memory [158] and photodetector [159]; with proper design, it is entirely possible that...
Fig. 6: Development roadmap of 2D-material-based optical polarizers with different platforms. WG: waveguide. Values of wavelength ranges are taken from: ref.17. for 2011 (Graphene), ref.123. for 2014 (GO), ref.19. for 2014 (Graphene), ref.125. for 2015 (MoS2), ref.119. for 2015 ...