"2D materials for nanoelectronics, edited by Michel Houssa, Athanasios Dimoulas, and Alessandro Molle." Contemporary Physics, 58(3), pp. 287–288doi:10.1080/00107514.2017.1306584ProbertMattContemporary Physics
The paper presents the stateofthe art of nanoelectronic devices based on 2D materials related to the cutting edge of Moore's law. Ballistic electron devices, ferroelectric, and atomically thin heterostructures are analyzed to show the benefits of 2D materials applications in nanoelectronics. It is ...
2D materials are attractive for nanoelectronics due to their ultimate thickness dimension and unique physical properties. A wide variety of emerging spintronic device concepts will greatly benefit from the use of 2D materials, leading a better way to manipulating spin. In this review, we discuss vari...
least mature even at the laboratory level, but will benefit from all expected achievements as 2DMs enter semiconductor processing lines. 2D materials hold great promise to become the X-Factor for CMOS. This may be described as the era of heterogenous scaling, where new and additional materials p...
2D materials for nanoelectronics Nanoelectronics is a branch of technology that involves the use of electronic components and devices that are extremely small in size. The goal of this field is to create gadgets and systems that are faster, cheaper, and more efficient than their current ...
Graphene and 2D Materials for Nanoelectronics Nanoelectronics is an emerging field that aims to understand and exploit the properties of matter at the nanoscale. It involves developing electronic devices and circuits that are smaller and faster than their macroscopic counterparts. The use of 2D ...
Besides of mechanical exfoliation, liquid-phase exfoliation (LPE) method provides a way for massive production on 2D materials. Xie et al. realized the nonlayered 2D ultrathin Te nanosheets from the Te bulk by LPE, which cover the broad lateral size changing from 41.5 to 177.5 nm and the ...
For more information see https://www.degruyter.com/how-access-works Showing a limited preview of this publication: 3 Valleytronics and a new way to encodeinformation using 2D materials3.1 Valleytronics: basic science behind and interestIn crystalline systems, we can determine the relationship betw...
Also, we note that epitaxial oxides like La2O3 or Gd2O3 have been previously considered for applications in Si devices61,67, and they may be a promising option for scaled 2D FETs as well. At present, leakage currents through amorphous oxides on 2D materials strongly depend on the material...
Various 2D/3D heterostructures can be created by harnessing the advantages of both the layered two-dimensional semiconductors and bulk materials. A semiconducting gate field-effect transistor (SG-FET) structure based on 2D/3D heterostructures is proposed