P D Pulsed Drain Current 1) 20V P-Channel Enhancement-Mode MOSFET V DS = -20V R DS(ON),Vgs@-4.5V, Ids@-2.8A = 100R DS(ON), Vgs@-2.5V, Ids@-2.0A = 150Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche...
AP2305AI -4.9A -20V SOT23场效应管规格书.pdf,AP2305AI -20V P-Channel Enhancement Mode MOSFET Description The AP2305AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This devic
AP6P02BF -6A -20V PDFN2X2-6L场效应管规格书.pdf,AP6P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP6P02BF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This
WMQ55P02T1 20V P-Channel Enhancement Mode Power MOSFET Description WMQ55P02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ⚫ VDS= -20V, ID = -55A RDS(on) < 8.2mΩ @ ...
VDS = -20V ID =-3.3A RDS(ON) < 80mΩ@ VGS=-4.5V Application Battery protection Load ...
型号 HYG080P02KQ1D P 沟道MOSFET -20V 6.9mΩ 芯片 深圳市汇友迪科技是华羿微-Huayi原厂指定代理商 HYG080P02KQ1D产品概述: P-Channel Enhancement Mode MOSFET此器件为 P 沟 道、-20V耐压、6.9mΩ内阻、TO-252-2L封装产品,芯片采用Trench工艺设计。 该器件抗冲击能力强,适合较低开关频率应用,可满足负载...
20V N-Channel Enhancement-Mode MOSFET 20V N 沟道增强型 MOS 管 HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD Protected:2000V Features 特性 Advanced trench...
20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@2.5V, Ids@3.0A = 23mΩ RDS(ON), Vgs@4.0V, Ids@4.0A = 21mΩ RDS(ON), Vgs@4.5V, Ids@4.5A = 19mΩ 特点 1. 专有的先进平面技术 2. 高密度超低电阻设计 3. 大功率、大电流应用 ...
模式增强帮助20VP沟道增强ModeP沟道MODEmode的 系统标签: 沟道enhancementmodechanneldraingate -20V/-4.0A,RDS(ON)=45m(typ.)@VGS=-4.5V-20V/-4.0A,RDS(ON)=54m(typ.)@VGS=-2.5V-20V/-2.0A,RDS(ON)=68m(typ.)@VGS=-1.8V-20V/-1.0A,RDS(ON)=92m(typ.)@VGS=-1.5VSuperhighdensitycelldesignfor...
20V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Power Management Switches WAYON-WMR12P02T1Description :WMR12P02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and...