Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520–525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, wit... H Zhao,RA Arif,NM Tansu,... 被引量: 0发表: 0...