In an aspect, the disclosure provides a RRAM including a plurality of 1TnR structures which includes a first 1TnR structure which includes a first transistor having a first gate terminal connected to a first word line, a first drain terminal, and a first source terminal connected to a source...
Recently, the 1TnR RRAM structure, in which n RRAM cells in each row share a common bottom electrode connected to the drain node of a selector transistor, was proposed to improve the integration density [3,4]. The area of the 1T4R RRAM test chip is 30% smaller than that of the ...
Sneak PathTest MethodOne-Transistor-n-Resistance RRAM cellResistive Random Access MemoryScience China Information Sciences - 本文利用潜通路电流作为故障表征,...Cui, XiaoleKey Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen, ChinaZhang, Qiang...
[1,2].Recently,the 1Tn R RRAM structure,in which n RRAM cells in each row share a common bottom electrode connected to the drain node of a selector transistor,was proposed to improve the integration density[3,4].The area of the 1T4R RRAM test chip is 30%smaller than that of the ...