图2: (a) 低覆盖度下1T-TaS2表面K原子的吸附位置;(b) 高覆盖度下(金属化表面)K原子的吸附位置;(c) 从(b)中的白色正方形区域提取的K原子吸附位置;(d) STM图像(b)的傅立叶变换。 图3: (a) 常规的电子掺杂Mott绝缘体的Hubbard模...
浙江大学物理系尹艺教授实验组利用低温扫描隧道显微镜(STM)对1T-TaS2这一材料做了一系列系统的研究。二维材料1T-TaS2的层与层之间的相互作用和电荷密度波堆叠序对母体的性质影响是人们难以理解其绝缘态的重要因素。课题组利用STM仔细研究了1T-TaS2大量单层台阶处的堆叠序和电子态密度,统计分析了堆叠序对上层电子态密...
Investigating 1T-TaS2 with an STM we found that its bulk hexagonal lattice bears the inherent tendency to a slow and irregular degradation of the surface. The onset of this degradation is triggered by any electrical current above a minimum density. This current may be due to the STM scanning...
图2: (a) 低覆盖度下1T-TaS2表面K原子的吸附位置;(b) 高覆盖度下(金属化表面)K原子的吸附位置;(c) 从(b)中的白色正方形区域提取的K原子吸附位置;(d) STM图像(b)的傅立叶变换。 图3: (a) 常规的电子掺杂Mott绝缘体的Hubbard模型;(b) 集团微扰理论计算的局域态密度,蓝色虚线表示半填充未掺杂的系统,...
图2: (a) 低覆盖度下1T-TaS2表面K原子的吸附位置;(b) 高覆盖度下(金属化表面)K原子的吸附位置;(c) 从(b)中的白色正方形区域提取的K原子吸附位置;(d) STM图像(b)的傅立叶变换。 图3: (a) 常规的电子掺杂Mott绝缘体的Hubbard模型;(b) 集团微扰理论计算的局域态密度,蓝色虚线表示半填充未掺杂的系统...
图2: (a) 低覆盖度下1T-TaS2表面K原子的吸附位置;(b) 高覆盖度下(金属化表面)K原子的吸附位置;(c) 从(b)中的白色正方形区域提取的K原子吸附位置;(d) STM图像(b)的傅立叶变换。 图3: (a) 常规的电子掺杂Mott绝缘体的Hubbard模型;(b) 集团微扰理论计算的局域态密度,蓝色虚线表示半填充未掺杂的系统...
In this study, we show a possible strain-induced Mott-gap collapse in the pristine 1T-TaS[Math Processing Error]2 by scanning tunneling microscopy (STM). In a strain-rich area, we find mosaic CDW domains and the stable mosaic state is most possibly induced by the intrinsic strain. In the...
The in-plane CDW structures are well investigated by, e.g., X-ray diffraction (XRD), electron diffraction and scanning tunneling microscopy (STM)13,15,16. However, the out-of-plane CDW stacking is still puzzling and periodicities and correlation lengths remain unclear. Since the strong ...
This is because it is difficult to identify whether a domain wall exists below the step edge in the STM image or not. Moreover, it should be noted that when cleaving the bulk sample, it may tear along energetically unstable areas such as domain walls (right panel in Fig. 3d and ...
作者:W Wei,T Hasegawa,A Manivannan,H Ikuta,W Yamaguchi,M Nanto,Y Nakayama,A Fujishima,K Kitazawa DOI: 10.11316/jpsgaiyod.46.2.0_463_2 年份: 1991 收藏 引用 批量引用 报错 分享 全部来源 求助全文 jstage.jst.go.jp 来源期刊 Meeting Abstracts of the Physical Society of Japan 1991/09/12 ...