SEM和TEM结果显示了双金属硒化物异质结构在还原氧化石墨烯(rGO)表面的成功构建和均匀生长,且表现出分层片状结构,同时在靠近Cu2Se的区域生成有大面积的1T相MoSe2,Raman和XPS光谱结果(图3)同样证实了1T相MoSe2的生成,同时显示出了由Cu+...
过渡金属硫化物的新型1T′晶相在HER电催化反应中具有优异的性能,但是1T′晶相容易转变为更加稳定的2H晶相,这降低了催化活性和稳定性。 有鉴于此,西北工业大学刘正清副教授、西安交通大学曲晓艳副教授等报道首先合成Cu1.94S@TMDs异质结,包括1T′-MoS2, M...
In situ Raman observation of the phase transformation process from 1T’-MoS2 to 2H-MoS2 under laser irradiation About this article Cite this article Yu, Y., Nam, GH., He, Q.et al.High phase-purity 1T′-MoS2- and 1T′-MoSe2-layered crystals.Nature Chem10, 638–643 (2018). https://...
在这里,我们报道了4H-Au纳米线(NWs)作为模板时,可以通过简单快速的湿化学方法诱导高相纯度和稳定的1T′-TMD MLs的准外延生长,包括WS2、WSe2、MoS2和MoSe2。合成的4H-Au@1T′-TMD核壳NWs可用于超灵敏的表面增强拉曼散射(SERS)检测。例如4H-Au@1T′-WS2 NWs已经实现了罗丹明6G和多种严重急性呼吸综合征冠状...
High phase-purity 1T′-MoS2- and 1T′-MoSe2-layered crystals. Nat. Chem. 10, 638–643 (2018). Article CAS Google Scholar Duerloo, K. A., Li, Y. & Reed, E. J. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers. Nat. Commun. 5, 4214 (2014). ...
Electrodeposited Mo films on graphite and nanowires in AAO were thermally selenized.Effect of temperature and selenization duration were studied.2H MoSe2and 1T/2H MoSe2were successfully obtained by two-step synthesis method.The materials were characterized by FE-SEM, EDS, XRD, XPS and Raman ...
Synthesis of 2H MoSe2nanosheets: 1 mmol of Na2MoO4·2H2O, 2 mmol Structure and property of MoSe2 Several MoSe2samples with different phase structure were prepared by a NaBH4-assisted hydrothermal method. The XRD patterns and Raman spectra were conducted to determine the phase structures and compos...
TiBfhfLeerG1enTst′ucabhnsadtrr2aaHctete-uWrisziSanetg2iomMnsoBniEn- RHEED and Raman measurements. The growth of 1T′/2H phase-mixture film could be used for fabricate the lateral 2D metal-semiconductor heterojunction. And the thermo-driven phase transition from 1T′ to 2H in mon- olayer ...
We find that the conductance response to strong electron donors in both monolayer MoS2 and MoSe2 FET devices ceases after moderate exposure, with final value of the conductance being on order of that expected for the 1T phase. Full device relaxation back to a semiconducting state is accomplished...
Carrier densities ~1014 cm−2 and an insulating-to-superconducting transition have been reported in 2H-MoS232,44,45,46, 2H-MoSe247, 2H-WS234,48 and 1T-SnSe249 using the ionic-liquid gating technique. Ising pairing has been observed in ionic-liquid gated 2H-MoS232,45,46 and 2H-WS...