[6] G. Bae et al., “3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications,” IEEE International Electron Devices Meeting (IEDM), pp. 656-659, 2018. [7] “IBM Unveils World's First 2 Nanometer Chip Technology, Opening a New Frontier for Se...
One problem with this process is that silicon circuits typically have aluminum or copper as a top layer so the chip can be connected to a package or carrier before it is mounted onto a printed circuit board. But sulfur causes these metals to sulfurize, the same way some metals rust when ...
[6] Moore, G.E. ,“Cramming More Components onto Integrated Circuits”. Electronics.1965,38(8): pp.114-117. [7] WikiChip:Technology Node.https://en.wikichip.org/wiki/technology_node [8] DIGITIMES:行业观察:昂贵的半导体游戏.2021.12.21.https://www.digitimes.com/news/a20211221VL200.html?
https://www.pcmag.com/encyclopedia/term/process-technology https://www.technologyreview.com/2017/11/06/147943/intel-and-amd-team-up-to-take-on-nvidias-ai-chip-dominance/ 来源:DeepTech深科技
来源：Wikichip Fuse 对于早期传统的planar FET晶体管来说，随着工艺发展，gate length(栅极长度，Lg)越来越短，到20nm工艺前后已经有了短沟道效应这种比较显著的问题，也就无法进行有效的静电控制。所以22nm时期FinFET出现了，fin伸了出来(上图橙色部分)，有效增大了沟道接触面积。与此同时，只要把fin做得更高，那么...
英特尔、三星、台积电晶体管密度对比图,图源丨WikiChip Analysis 通过对比发现,同一代制程的晶体管密度英特尔将近是台积电的一倍。当英特尔将其10nm更名为Intel 7时,晶体管密度仍然是与台积电7nm相当的。[22] 对台积电来说,性能较上一代有提升,这一数字也与物理毫不相关,即便不在正确的摩尔定律对应点上,这样叫也没什...
来源:Wikichip Fuse 对于早期传统的planar FET晶体管来说,随着工艺发展,gate length(栅极长度,Lg)越来越短,到20nm工艺前后已经有了短沟道效应这种比较显著的问题,也就无法进行有效的静电控制。所以22nm时期FinFET出现了,fin伸了出来(上图橙色部分),有效增大了沟道接触面...
[7] WikiChip:Technology Node.https://en.wikichip.org/wiki/technology_node [8] DIGITIMES:行业观察:昂贵的半导体游戏.2021.12.21.https://www.digitimes.com/news/a20211221VL200.html?mod=3&q=foundry+process [9] Semiconductor Engineering:Big Trouble At 3nm.2018.8.21.https://semiengineering.com/...
[7] WikiChip:Technology Node.https://en.wikichip.org/wiki/technology_node [8] DIGITIMES:行业观察:昂贵的半导体游戏.2021.12.21.https://www.digitimes.com/news/a20211221VL200.html?mod=3&q=foundry+process [9] Semiconductor Engineering:Big Trouble At 3nm.2018.8.21.https://semiengineering.com/...
来源:Wikichip Fuse 对于早期传统的planar FET晶体管来说,随着工艺发展,gate length(栅极长度,Lg)越来越短,到20nm工艺前后已经有了短沟道效应这种比较显著的问题,也就无法进行有效的静电控制。所以22nm时期FinFET出现了,fin伸了出来(上图橙色部分),有效增大了沟道接触面积。与此同时,只要把fin做得更高,那么更宽的...