This paper presents the design and fabrication of 1600V 4H-SiC UMOSFETs with a novel dual buffer layer structure, which shortens the trench etching time by 2× and achieves a high channel periphery density of 3330cm/cm2 for low specific on-resistance. The device exhibits 50mΩ-cm2 of ...
Gomez, C. Bui, and E. Hanna, "1600V 4H-SiC UMOSFETs with dual buffer layers", 17th Int. Symposium on Power Semiconductor Devices and IC's", Santa Barbara, CA, USA, May 2005, pp. 211-214.V4H-SiC UMOSFETs with dual buffer layers. Q.Zhang,M. Gomez,C. Bui. ISPSD . 2005...