A 1550nm‐band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side‐wall grating is formed in a simultaneous process with the ridge waveguide, and room‐temperature continuous‐wave single‐mode oscillation is achieved. A rather low‐threshold current...
Cross-saturation dynamics in InAs/InP quantum dash optical amplifiers operating at 1550 nm.Cross-saturation dynamics in InAs/InP quantum dash optical amplifiers operating at 1550 nm.electro-optical modulationlaser transitionsoptical saturationquantum dot laserssemiconductor...
Results showed that the laser power was 5.31μW at a voltage of 2.5 V, and the laser wavelength reached 1519.4nm at room temperature. The proposed laser can be used as a light source compatible with the Si-based CMOS process. 展开 关键词: Ge quantum dot tensile strain Si-based light ...
Quantum confined laser and optical amplifier structures based on quantum dots and dashes (QD) have been at the forefront of optoelectronics device research for several years. Owing to their superb optoelectronic properties such as wide g... A Bilenca,R Alizon,V Mikhelashvili,... - 《Electronic...
The active region of the quantum dot(QD) structure can realize high luminous efficiency due to its 3D carrier confinement. In this study, we constructed a Si-based QD array laser by introducing a 0.25% biaxial tensile strain and 4 脳 10 19 cm 3 N type heavy doping to Ge. A band-...
In addition also strong improvement are expected from this laser material in the static properties, in particular on the linewidth due to the suppression of the linewidth enhancement factor. First distributed feedback lasers on similar quantum dot laser material were processed and preliminary linewidth ...
The active region of the quantum dot(QD) structure can realize high luminous efficiency due to its 3D carrier confinement. In this study, we constructed a Si-based QD array laser by introducing a 0.25% biaxial tensile strain and 4 脳 10~(19) cm~(?3) N type heavy doping to Ge. A ...
Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser ApplicationsInAs/GaAs QDsShort-period superlatticePhonon bottleneck effectSESAMsMode-locked lasers...
A Khalaidovski,J Steinlechner,R Schnabel - 《Classical & Quantum Gravity》 被引量: 15发表: 2013年 Spectroscopic and energy transfer investigation of Nd/Yb in Y2O3 transparent ceramics The possibility of using this system for Nd-sensitized Yb3+ laser emission from room-to-cryogenic temperatures is...
According to the agreement, CyOptics will collaborate with Zia Laser to develop the processes required to productize 15 50nm Tunable Gain lasers and 1310nm uncooled lasers based on Quantum Dot technology. Zia Laser will sell to CyOptics 1310nm lasers.Anonymous...