The crystalline structures and the chemical compositions of the as-synthesized beta-Ga2O3 nanostructures were characterized through X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectrometry (EDS).Chung, HSKim, SCKim,...
The optimized single crystalline beta-Ga2O3 film was grown at 750 degrees C, and the full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curve was 21.6 arcsec, smaller than that of the beta-Ga2O3 substrate (26.3 arcsec). The film exhibited a greatly smooth surface ...
X-ray diffraction (XRD) and magnetization measurements of Y-2 (Fe1-xCox)(15)Ga-2 (0 less than or equal to x less than or equal to 1) compounds were performed. All samples were single-phase with a hexagonal Th2Ni17-type structure. The substitution of Co for Fe leads to a nearly ...
Films were characterized by X-ray diffraction (XRD), Micro-Raman and elemental identification was performed with an Energy Dispersive X-ray Spectroscopy (EDS). Transport measurements were performed down to liquid helium temperatures by four-probe contact technique, showed characteristics analogous to ...
alpha- and beta-Ga2O3:Eu3+ were converted from as-prepared GaOOH:Eu3+ particles by dehydration at 500 degrees C and 850 degrees C, respectively. The products were characterized with XRD (X-ray diffraction) and FE-SEM (field emission scanning electron microscopy). Results show that solution ...
Raman modes of β-Ga 2 O 3 started to evolve at Ts of 400°C and then, were clearly defined and dominant at Ts above 600°C in a good consistence with XRD result. In the PL spectra at Ts above 600°C, UV emission peaked at 3.75eV and red-emission composed of broad band and ...
The improvement of the crystalline quality of thin films caused by substrate annealing temperature was investigated using XRD. The core level XPS spectra of O1s and Ga3d indicate the presence of Ga–O bonds in the β-Ga 2 O 3 thin films. The chemical oxidation state of Ga ions in the ...
To compare the effect of different sputtering times on the growth quality of the thin film material, a magnified comparison was performed for the peak position at 58° in the XRD pattern and the Raman characteristic peak at 202.1 cm−1 in the Raman pattern (Figure 1c, d). The XRD ...
(b) Micro-XRD pattern for the peeled β-Ga2O3 nanosheet on the SiO2/Si (p2+) substrate after Ar plasma pre-treatment. The inset gives the micro-XRD pattern of the β-Ga2O3 nanosheet before Ar plasma pre-treatment. 4. Conclusions In summary, four types of plasma treatments (i.e., ...
(XRD),field emission scanning electron microscope(FE-SEM),transmission electron microscope(TEM),and selected-area electron diffraction(SAD).FE-SEM images show that the nanoparticles aggregate to form micron-size nano-clusters at chamber pressures of 1 and 5 Torr.On the other hand,nanoparticles ...