This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (/spl alpha/-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and ...
For poly-Si thin film transistors (TFTs) in order to improve the electrical characteristics of the poly-Si films a better understanding of the structure of the films and the related defects versus grain size is needed. In this contribution the structure and the stability of defects of the ...
Degradation of /spl alpha/-Si:H TFTs caused by electrostatic dischargedoi:10.1109/ICMEL.2000.840589N. TosicF.G. KuperT. MouthaanIEEEInternational Conference on Microelectronics
Investigates the low-frequency noise of hydrogenated-amorphous-silicon thin-film transistors (TFT) with a thin active layer and an inverted staggered device structure operating in the conducting mode. Characteristics of the current-voltage of the hydrogenated-amorphous-silicon TFT; Noise properties; ...