Degradation of /spl alpha/-Si:H TFTs caused by electrostatic dischargedoi:10.1109/ICMEL.2000.840589N. TosicF.G. KuperT. MouthaanIEEEInternational Conference on Microelectronics
This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (/spl alpha/-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and ...
Investigates the low-frequency noise of hydrogenated-amorphous-silicon thin-film transistors (TFT) with a thin active layer and an inverted staggered device structure operating in the conducting mode. Characteristics of the current-voltage of the hydrogenated-amorphous-silicon TFT; Noise properties; ...
For poly-Si thin film transistors (TFTs) in order to improve the electrical characteristics of the poly-Si films a better understanding of the structure of the films and the related defects versus grain size is needed. In this contribution the structure and the stability of defects of the ...