Recently gallium oxide (Ga2O3) has become one of the most actively studied materials due to its competitive electronic properties such as wide bandgap, high breakdown field, simple control of carrier concentration, and high thermal stability. These properties make gallium oxide a promising candidate ...
1.一种alpha相氧化镓薄膜的制备方法,其特征在于,包括如下步骤:步骤一、对m面蓝宝石衬底进行清洗,吹干后放入衬底托盘;步骤二、将衬底载入真空室,待真空室的真空度达到3×10-6 Pa后,通入高纯氩气,气体流量控制在40 sccm,调节真空室真空度为1Pa;步骤三、对高纯Ga2O3陶瓷靶材进行预处理;步骤四、采用磁控溅射法在...
The alpha-Ga2O3 acts as a growth template and results in the crystalline orientation of alpha-GaN on polycrystal gamma-Al2O3. Further support for this template is derived from energy dispersive x-ray spectroscopy that shows the existence of Ga atoms on AlOx. Combined XTEM/RHEED analysis ...
伽马粒子,中子及alpha粒子,都会对Ga2O3材料造成电离损伤和位移损伤.模拟结果为中子辐照环境下Ga2O3材料的实验研究提供理论指导,对Ga2O3材料应用于深空探测具有参考... 罗智,刘洋 - 《Nuclear Science\s&\stechnology》 被引量: 0发表: 2024年 一种妇科抗菌凝胶 本发明公开了一种妇科抗菌凝胶,包括如下重量份的...
While the importance of alpha-Ga2O3 crystals is increasingly gaining much interest, the structural behavior of halide vapor phase epitaxy (HVPE) alpha-Ga2O3 crystals in wet chemical etching has not been explored yet. In this study, we investigate the structural characterization of HVPE alpha-G...
A theoretical model of misfit stress relaxation in film/substrate alpha-Ga2O3/alpha-Al2O3 heterostructures with allowance for lattice anisotropy of heterostructure materials is proposed. Nucleation of misfit dislocations as a result of basal or prismatic slip in alpha-Ga2O3/alpha-Al2O3 ...
Thermal Expansion of Alpha Ga2O3No abstract is available for this article.doi:10.1111/j.1151-2916.1973.tb12471.xL. J. ECKERTR. C. BRADTJohn Wiley & Sons, Ltd.Journal of the American Ceramic Society
In non-degenerate alpha-Ga2O3, an impurity-band effect is obvious in the low temperature region, and dislocation scattering is the dominant scattering mechanism. In contrast, in degenerate alpha-Ga2O3, although the dislocation density is comparable to the non-degenerate one, the mobility is ...
由于目前在研的SiC、GaN和金刚石等材料各自都还存在问题，为此我们提出采用带隙高达4.9eV的氧化镓材料制备alpha粒子探测器；采用MOCVD方法，结合原位材料表面改性技术，制备出高质量异质外延层；从工艺简单的肖特基结构入手，研究氧化镓与alpha粒子的相互作用机制，建立探测模型；进一步制备出基于p-GaN/i-Ga2O3/n-SiC...