Thermal Expansion of Alpha Ga2O3No abstract is available for this article.doi:10.1111/j.1151-2916.1973.tb12471.xL. J. ECKERTR. C. BRADTJohn Wiley & Sons, Ltd.Journal of the American Ceramic Society
The alpha-Ga2O3 acts as a growth template and results in the crystalline orientation of alpha-GaN on polycrystal gamma-Al2O3. Further support for this template is derived from energy dispersive x-ray spectroscopy that shows the existence of Ga atoms on AlOx. Combined XTEM/RHEED analysis ...
Solar-BlindPhotodetectorwithHighAvalancheGainsandBias-TunableDetectingFunctionalityBasedonMetastablePhaseα‑Ga2O3/ZnOIsotypeHeterostru..
where the atomic number in a unit volume,m = 8.0 × 1022atoms/cm3can be obtained from the density,ρ = 3.2 g/cm3. The dpa ~0.93, as obtained in this study, is significantly larger than the widely cited, the critical amorphization dose ~0.25 dpa, as was measured...
1.一种alpha相氧化镓薄膜的制备方法,其特征在于,包括如下步骤:步骤一、对m面蓝宝石衬底进行清洗,吹干后放入衬底托盘;步骤二、将衬底载入真空室,待真空室的真空度达到3×10-6 Pa后,通入高纯氩气,气体流量控制在40 sccm,调节真空室真空度为1Pa;步骤三、对高纯Ga2O3陶瓷靶材进行预处理;步骤四、采用磁控溅射法在...
A theoretical model of misfit stress relaxation in film/substrate alpha-Ga2O3/alpha-Al2O3 heterostructures with allowance for lattice anisotropy of heterostructure materials is proposed. Nucleation of misfit dislocations as a result of basal or prismatic slip in alpha-Ga2O3/alpha-Al2O3 ...
The bandgap energy of alpha-Ga2O3 is estimated to be 5.56 eV from the CL measurement in a transmission electron microscope. A peak at 320 nm was observed within the domain, while the domain boundary showed spectrum peaks with 380–480 nm. The anti-phase domain (APD) is formed by the ...
The crystal quality of ${\\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.Son, HokiRa, Yong-HoLee, Young-JinLee, Mi-JaiKim, Jin-HoHwang, JongheeKim, Sun WoogLim, Tae-Young
BETA-GA2O3Metastable (00l)-oriented rhombohedral alpha-Ga2O3 thin films with phase purity were epitaxially grown on c-plane alpha-Al2O3 substrates using pulsed laser deposition. It was elucidated that domain matching epitaxy enables the epitaxial growth of alpha-Ga2O3 thin film on alpha-Al2O...
The Ni/alpha-Ga2O3/Si MIS diode exhibits a leakage current density of 1.07 x 10(-5) A/cm(2) under - 2V bias. The breakdown voltage of the diode reaches - 166 V without the guard ring and other insulation structures. Our results demonstrate that LPD-grown alpha-Ga2O3 thin films ...