The main criteria for MOSFET selection are the power loss associated with the MOSFET (related to the overall efficiency of the SMPS) and the power-dissipation capability of the MOSFET (related to the maximum junction temperature and thermal performance of the package). This application note focuses...
I used onsem's sic mosfet model (NTHL040N120M3S)for double pulse test simulation which will generates large voltage and current, but the simulation results were not satisfactory,just as follows: This is the schematic diagram I built: the NTHL040N120M3S model...
Power MOSFET having a trench gate electrode and method of making the same A trench-gated power MOSFET (20) contains a highly doped region (222) in the body region (218) which forms a PN junction diode (D1) with the drain at the center of the MOSFET cell. This diode has an avalanche...
这项权力 MOSFET 使用设计 翻译结果4复制译文编辑译文朗读译文返回顶部 翻译结果5复制译文编辑译文朗读译文返回顶部 相关内容 a自动化设备运行轨道 Automatic equipment movement track[translate] ait is too early to predict the failure of the speech contest 是太早到演讲比赛的predictthe失败[translate] ...
www.ti.com Technical Article What's Not in the Power MOSFET Data Sheet, Part 1: Temperature Dependency John Wallace1 Power metal-oxide semiconductor field-effect transistor (MOSFET) data sheets provide useful information such as key specifications, ratings and characteristics to help you confirm ...
And a method of forming a power mosfet And methods of forming the power MOSFET. A device comprising a semiconductor region and extending to a first conductivity type having a trench, and a condu... 伍震威,周学良,苏柏智,... 被引量: 0发表: 2013年 POWER MOSFET AND METHOD OF FORMING THE ...
矽源特ChipSourceTek-PE15D11T是VDS=-18V, ID=-7A,RDS(ON)<23mΩ@VGS=-4.5V,RDS(ON)<30mΩ@VGS=-2.5V的P沟道增强模式Mosfet。采用TSSOP-8封装。 The 矽源特ChipSourceTek-PE15D11T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide...
矽源特ChipSourceTek-PE01P40K是VDS=-100V, ID=-40A,RDS(ON)<45mΩ@VGS=-10V,RDS(ON)<55mΩ@VGS=-4.5V的P沟道增强模式Mosfet。提供TO-252-2L封装。 The 矽源特ChipSourceTek-PE01P40K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a...
power MOSFET Q1, and driven by the L6562A. 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 翻译结果2复制译文编辑译文朗读译文返回顶部...
This thread has been locked. If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question. What is the most appropiate MOSFET (SW1,SW2,SW3,SW4) for this application?