More specifically, all-optical switching (AOS) of magnetic materials, whereby the magnetization can be reversed on a picosecond timescale using only femtosecond (fs) laser pulses, has striking potential. First discovered around a decade ago2, it has since been shown that two mechanisms can be ...
We have studied the paramagnetic resonance signal (PRS, Δm=+1) of the 3d5 spin of Mn2+ in Cd1-xMnxTe epilayers and, less extensively, in a quantum-well structure by means of Raman spectroscopy in an external magnetic field of 6 T at low temperatures. The exciting laser or the scattere...
However, the calculations clearly show that the layered magnetic structures are considerably lower in energy as compared to a homogeneous magnetic ground state, e.g. 9.3 meV/f.u. The ordering of the tetrahedral chains considered only weakly influences the magnetic ground state (See Supplementary ...
In addition, the SMR has also been revealed sensitive to the thickness of MCVA in the MCVA/Pt heterostructure. 2. Experiments Mn-Co-V-Al films with thicknesses from 7 to 24 nm are grown on MgO (100) substrates at 600 °C by DC co-sputtering of Mn2VAl and Co targets, with a...
Mn(1) has a smaller magnetic moment (3.07 µB) than Mn(2) (3.91 µB) implying that Mn(1) corresponds to Mn3+ and Mn(2) to Mn2+, both in high-spin states. The electronic structure indicates that it is an indirect band-gap semiconductor with a band gap of 0.88 eV, in ...
cell. The magnetic moments of Fe2 and Mn1 and those of Fe1 and Mn2 point in opposite directions. Our calculation [17] yields the magnetic moments as m Fe 1:4 B and m Mn 1:9 B . When a current passes through an antiferromagnetic material, the current-induced nonequilibrium...
The net magnetic moment of Pb8Fe"Fe2 F24 is equal tozero in agreement with an antiferromagnetic structure. Thismagnetic structure does not evolve in the temperature range: 1.4-20 K. Thus, only one magnetic phase occurs below T < TN = 21 K.Under a sufficiently strong magnetic field (H >...
We report first-principles calculations on spin polarization of cation vacancies in group-III nitrides: GaN, AlN, and In0.5Ga0.5N. In all the cases examined, the charge state of the vacancy universally determines the magnetic moment of the cation vacancy regardless of the cation composition. In...
1c,d. We demonstrate experimentally that the effective spiral handedness, which is usually controlled by an electric field in magnetic spiral ferroelectrics, couples not only with P but also with M via the C,Q domain switching, and its sign can be reversed by a magnetic field in Mn2GeO4....
Only two compounds, CuMnAs and Mn2Au, are known to provide at room temperature the collinear commensurate antiferromagnetic order and specific crystal structure, which is predicted to result in the staggered spin accumulation in the sublattice structure, leading to bulk Néel spin-orbit torques allowi...