期刊名称:SEMICONDUCTOR SCIENCE AND TECHNOLOGY期刊名缩写:SEMICOND SCI TECH期刊ISSN:0268-1242E-ISSN:1361-66412024年影响因子/JCR分区:1.9/Q3学科与分区:ENGINEERING, ELECTRICAL & ELECTRONIC - SCIE(Q3); MATERIALS SCIENCE, MULTIDISCIPLINARY - SCIE(Q4); PHYSICS, CONDENSED MATTER - SCIE(Q3)...
SEMICONDUCTOR SCIENCE AND TECHNOLOGY简称:SEMICOND SCI TECH 大类:工程技术 小类:工程:电子与电气 ISSN:0268-1242 ESSN:1361-6641 IF值:2.654 出版地:ENGLAND 点击咨询相似期刊 声明:①本页面非期刊官网,不以期刊名义对外征稿,仅展示期刊信息做参考.投稿、查稿,请移步至期刊官网. ②如果您是期刊负责人且不想本...
《SEMICONDUCTOR SCIENCE AND TECHNOLOGY》 期刊名缩写:SEMICOND SCI TECH 22年影响因子:2.048 issn:0268-1242 eIssn:1361-6641 类别:工程技术物理 学科与分区:工程、电气和电子(ENGINEERING, ELECTRICAL & ELECTRONIC) - SCIE(Q3)材料科学,多学科(MATERIALS SCIENCE, MULTIDISCIPLINARY) - SCIE(Q3)物理学、凝聚态物质...
期刊简介:Devoted to semiconductor research, Semiconductor Science and Technology's multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide sem...
SCIE期刊 学科领域:ENGINEERING, ELECTRICAL & ELECTRONIC Devoted to semiconductor research, Semiconductor Science and Technology's multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the pro...
期刊大全 Semiconductor Science and TechnologyEICAPubMedAJSCIEJCR:Q3中科院4区 发文量11,173 被引量162,290 影响因子(2023)2.000 Devoted to semiconductor research, Semiconductor Science and Technology's multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal cove...
国际标准刊号:ISSN 0268-1242;EISSN 1361-6641 期刊语言:英语 定价:0 地址:IOS PRESS , NIEUWE HEMWEG 6B, AMSTERDAM, NETHERLANDS, 1013 BG 期刊邮箱: 投稿网址:https://mc04.manuscriptcentral.com/sst-iop 期刊网址:https://iopscience.iop.org/journal/0268-1242 出版商网址:http://www.iop.orgSemicond...
期刊名称:《Semiconductor science and technology》 | 2018年第6期 关键词: Mid-IR photodetectors; InAs photodiodes; low frequency noise; forward bias; photovoltaic mode; 6.Elastic, vibration and thermodynamic properties of Cu_(1_x)Ag_xInTe_2 (x = 0, 0.25, 0.5, 0.75 and 1) chalcopyrite com...
刊名:Semiconductor science and technology 2020年第2期 摘要:An analytical model was proposed to simulate the resistive switching (RS) process of electrochemical metallization memory (ECM) device with a dual-layer structure, in which the AgInSbTe (AIST) buffer layer was introduced to combine wi...