zones generated too little voltage for warning, making active quench protection unable to prevent local overheating as magnetic energy turned into very localized heating. A key challenge of HTS magnets is thus the timely detection of small hot spots that grow only at several cm/s, rather than th...
S.; Long, S. 1 kV Vertical β-Ga2O3Heterojunction Barrier Schottky Diode with Hybrid Unipolar and Bipolar Operation. In Proceedings of the 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, 28 May–1 June 2023; pp. 394–397. [Google Scholar...
Designed using a 180 nm CMOS process from TSMC, post-layout simulations demonstrated a DC gain of 44.16 dB, with nominal values for the SCMRR and PSRR measured at 80.50 dB and 72.55 dB, respectively. The front end was shown to consume 3.77 μμW per recording channel, totaling about 60 ...
Designed using a 180 nm CMOS process from TSMC, post-layout simulations demonstrated a DC gain of 44.16 dB, with nominal values for the SCMRR and PSRR measured at 80.50 dB and 72.55 dB, respectively. The front end was shown to consume 3.77 μμW per recording channel, totaling about 60 ...