The meaning of METAL-OXIDE SEMICONDUCTOR is a semiconductor device (such as a diode or a capacitor) in which a metallic oxide (such as silicon dioxide) serves as an insulating layer.
Progress in metal oxide-based electrocatalysts for sustainable water splitting Metal oxide-based electrocatalysts are promising alternatives to platinum group metals for water splitting due to their low cost, abundant raw materials, a... AS Jamadar,R Sutar,S Patil,... - 《Materials Reports Energy》...
摘要: Use of hydrogen, oxygen, and carbon oxide semiconductor sensors made of metal oxides allows controlling electronically the content of these gases in operation of many hydrogen setups, cells and devices. Present review-paper gives a general idea of achievements in this field.关键词:...
oxygen i (2.1)pkb′=6.06×n×2×Z*m×d2−3.06nm=nm(12.12×Z*d2−3.06) pkb′ is the negative logarithm of alkali constant of metal oxide in aqueous solution;dis the sum of radius of metal ion and O2 −ion, and the radius of oxygen ion is 1.4A˙Z* is the effective nuclear...
An oxygen excess type metal oxide expressed with the following formula (1) and exhibiting high speed reversible oxygen diffusibility whereby a large amount of excess oxygen is diffused at a high speed and reversibly in a low temperature region: AjBkCmDnO7+δ(1) where A: one or more trivalent...
Metal oxide-based nanocomposites (MON) are materials that are originated in the interaction between two or more metal oxides, or between metal oxides and other functional nanomaterials. Conducting polymers, metal nanoparticles and carbon-based materials are some examples of functional materials that are...
It is noteworthy that the metal oxide nanoparticles exhibited toxic reactions toward cardiac and vascular cells due to their ability to generate “reactive oxygen species” or ROS, while creating oxidative stress [168]. Specifically, titanium dioxide and cobalt oxide nanoparticles are exposed to be hi...
Metal oxide semiconductor devices having doped sil 优质文献 相似文献 参考文献 引证文献Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric Metal–oxide-semiconductor (MOS) devices, using a Si substrate and a thermal SiON film as the gate dielectric on a...
1. Decomposition into elemental metals and oxygen; the general principle of such reaction is that, more active the metal is , the more stable formed metal oxide will be, the more difficult formed metal oxide can be subject to decomposition; otherwise easily prone to be subject to decomposition...
prevalent nitrogen removal techniques and recapitulate our current understanding of metal oxide-mediated nitrogen cycle in various ecosystems, the role and mechanism of microbial interactions, and the factors affecting the process. Further, the recent advances in experiments to achieve the application of ...