dielectrictangent介电损耗constant介电常数frequency 1.0Scope1.1Thistestmethodestablishesaprocedurefordetermin-ingthelowfrequencyoutofplanedielectricconstantandlosstangentoforganicfreefilmsusingatwo-fluidmethod.(Lowfrequencyisdefinedaslessthanorequalto1MHzinthismethod.)1.2Thetwo-fluidmethodusesathree-terminalguardedelect...
In this work we report on the pressure dependence of the low-frequency dielectric constant parallel to the c -axis (ε∥) in GaS, GaSe, and InSe as obtained from direct capacitance measurements. A large increase of ε∥ with pressure has been observed. The pressure change of the lattice...
Experimental/ dielectric functionelectric domain wallsferroelectric materialspotassium compounds/ complex dielectric constantparaelectricferroelectriccapacitance bridgeultra low frequenciesdispersionrelaxation stepsAs reported by Adriaenssens and Bjorkstam1 KH2AsO4 (KDA) shows a low-frequency dielectric relaxation in ...
We demonstrate a method for quantitatively probing the local low-frequency dielectric constant of thin insulating films by nanoscale capacitance microscopy. The calibrated capacitance-distance curves are measured on the dielectric film and analyzed by using a tip-sample capacitance model here proposed. App...
Though the relaxation may be explained by the existence of a central mode other possible origins can not be excluded. A similar relaxation of the dielectric constant was assumed to exist in KH2PO4 (KDP) for frequencies below 1 kHz but it could not be analysed by a radio frequency bridge....
Low dielectric constant materials and method Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) m... CJ ...
Use of low relative dielectric constant (low-k) material as an interlayer dielectric is among important approaches to reduce the RC time delay in high performance ultra-large-scale integrated circuits. Copper metallization is another approach besides the use of low-k material, in reducing the RC ...
专利名称：Low dielectric constant (low-k) dielectric and method of forming the same 发明人：J. Leon Shohet,Huifeng Zheng,Xiangyu Guo,Weiyi Li,Joshua Blatz,Dongfei Pei 申请号：US15696930 申请日：20170906 公开号：US10090150B2 公开日：20181002 专利内容由知识产权出版社提供 专利附图：摘要：A method...
High-performance polymer materials with low dielectric constant and low dielectric loss have been widely used in high-speed communication network. This review briefly introduces several common polymer materials, including polyimides, poly (benzoxazole)s, poly (aryl ether)s, poly (tetrafluoroethylene), ...
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