concentration, drift region thickness and gate capacitance are adjusted dependent at least in part upon the PNP gain of the IGBT to maintain the potential difference between the gate and emitter at a level greater than the IGBT threshold voltage when the collector voltage reaches the bus voltage....
-2 gate driver for paralleled IGBTs/MOSFETs Advanced Active Clamping in parallel IGBT operation with one common driver core Active clamping is a technique designed to partially turn on the power semiconductor as soon as the collector- emitter (drain-source) voltage exceeds a predefined threshold. ...
This is a typical graph which is also available in the datasheets for the IGBT or MOSFET and describes the dependence of the amount of charge required by the IGBT gate on the voltage drop between the gate and the emitter (or source). In the second graph the collector current (IC) and ...
The voltage Vbb may be approximately equal to Vss, or may be slightly less than Vss such as approximately minus 1 to minus 2 volts. Vbb is often coupled to p-type wells and p-type substrates in integrated circuits described herein. Vcc, Vss, and Vbb are received directly or are ...
11, the PMOS device's blocking diode 45 is reverse-biased, which allows the node 44 to exceed the supply voltage (+15 V). The body potential increases toward the +20 V input voltage minus the internal diode drop (e.g., 0.6 V) of the PMOS pn junction 51 which is forward-biased. ...
(or a 4.5 VDC source, neither shown). As soon as Qn4 becomes forward biased in response to the leading edge 221a of pulse 221, it supplies the V7 rail voltage (e.g., 7.5V minus the forward Vec drop of Qn4) to the emitter of PNP transistor Qp3 and causes the latter to become ...
C - emitterE) clamping circuit clamping clamp voltageEquipped withThe clamp circuitConstant voltage diode connected to CAndAn impedance circuit connected between the other of the constant voltage D and the minus power supplyOne end is connected to the connection point of the constant voltage D and ...
Provided is a gate drive circuit that is provided with an active clamp for protecting portions between a collector and an emitter of an IGBT, that suppresses heat generation of a constant voltage diode, and that generates a limited amount of noise. This gate drive circuit is provided with a ...