1.1 Floating zone silicon wafer specification Ingot Parameter Item Description Growing method FZ Orientation <111> Off-orientation 4±0.5 degree to the nearest <110> Type/Dopant P/Boron Resistivity 10-20 W.cm RRV ≤15% (Max edge-Cen)/Cen 1.2 FZ silicon wafer specification meter Item Description...
float zone siliconsolar cellsefficiencyCylindrical rods of multi-crystalline electronic grade FZ silicon with a diameter of 142 mm were grown. Wafers of 100 mm 100 mm sizes were prepared at different axial positions and characterized by -PCD minority carrier life time mapping, residual stress ...
The float-Zone lapped wafers are mainly used in semiconductor devices such as medium and low-end thyristors, silicon controlled rectifiers, and high voltage silicon stacks. The float-Zone etched wafers are mainly used on high power semiconductor devices such as DC high-power thyristors and rectifier...
During the float-zone growth method, a molten zone is passed along the silicon rod, melting the raw polycrystalline silicon material and leaving behind a purified monocrystal, shown in Figure 6. Modern FZ machines are now capable of accepting feedrods up to 2 m long with a weight between 60...
Float-Zone Silicon Ingot Product Description FZ High-purity single crystal. Product Usage Mainly used to process silicon wafers required by customers. Parameters
The float-zone (FZ) method for silicon crystal growth produces very high purities and low defect levels because no crucibles or other heated components are used, and the melt is only in contact with solid silicon. FZ growth is thus a useful tool for the study of defect and impurity effects...
A heating zone diameter (5) selected in a way to obtain the required result - to melt down all silicon in container or to maintain part of the initial not melted mass (7) between the molten zone (6) and the walls of the container. After melting of particular part of initial mass (7...
In this method, the fusion zone is restrained mainly by the forces of surface tension; therefore, crucibleless zone melting is widely used for refractory and active materials with sufficiently high surface tension and not very great density in liquid state (silicon, germanium, molybdenum, tungsten,...
Silicon supersaturated with platinum has preferred metastable trigonal or nearly trigonal arrangements of six platinum atoms after annealing at 540掳C. The structure is strongly affected by oxygen or oxygen related intrinsic defects. Co-doping with iron prevents the formation of platinum clusters, ...
3. A method as set forth in claim 1 wherein said rod is silicon and said seed is silicon. 4. A method as set forth in claim 2 wherein said rod is silicon and said seed is silicon. 5. A method as set forth in claim 4 wherein said container is silver. ...