This chapter discusses the applications of etching in SiC device fabrication, the chemistry of plasma-assisted SiC etching, and presents most of the published results on dry etching of SiC. The two SiC polytypes that have received the greatest attention for power devices are 6H and 4H. Much of...
S. J. PeartonS.J. Pearton, “Dry Etching of SiC,” Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA, pp. 1-31, http://www.mse.ufl.edu/˜spear/recent—papers/Dry—Etch—Sic.htm, no date avail....
Dry Etching of B-SiC in CF.sub.4 and CF.sub.4 +O.sub.2 Mixtures; Palmour et al; J. Vac. Sci. Technol. A, vol. 4, No. 3; May/Jun. 1986, pp. 590-593. Surface Characteristics of Monocrystalline B-SiC Dry Etched in Fluorinated Gases; Palmour et al; Mat. Res. Soc. Symp...
Inductively Coupled Plasma etching of 4H-SiC under ultraviolet illumination was examined for SF 6 /Ar and Cl 2 /Ar chemistries. Etch rate enhancements up to a factor of 8 were observed with UV light irradiation during Cl 2 /Ar etching. The enhancement mechanism is related to photodesorption ...
Using angled reactive ion etching (RIE) and wet chemical etching (WCE), planar (011) facets have been exposed on (100) GaInAsP/InP double heterostructures ... LA Coldren,K Furuya,BI Miller,... - 《Electronics Letters》 被引量: 25发表: 1982年 Wet and dry etching of SiC In this chapte...
The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer ...
In this abstract, a novel method of 4H-SiC shallow trench etching process via directly using photoresist as a mask is proposed to fabricate SiC MOSFETs and SiC diodes which enjoy popularity in power devices. By changing the profile of photo resist mask during exposure and development, with SF6...
2(a), the lateral etching of the first transparent conducting film 8b, where ITO does not react with Si, proceeds as shown in FIG. 2(b), and a part A, where only the interfacial reacted layer 8a remains on the a-SiC film 7d, is generated. When this condition is observed from the...
Dry etching of undoped, n- and p-type GaN films was carried out in Cl 2 -based inductively coupled plasmas(ICPs) using different rf excitation frequencies of 100 kHz and 13.56 MHz, in which the rf chuck power source operates. The etch rates with lower frequency of 100 kHz are somewhat ...
Dry etching of cubic (100)β㏒iC single crystal thin films produced via chemical vapor deposition (CVD) has been performed in CFand CF+Omixtures, in both the reactive ion etching (RIE) and plasma etching modes. The latter process yielded measurable etch rates, but produced a dark surface l...