Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-qualityβ-Ga2O3and high...
Science China Information Sciences - We develop a unified hybrid compact model of a different structure β-Ga2O3 SBDs for full-wave rectifier and mixer applications. The model results are...doi:10.1007/s11432-021-3224-2Kai ZhouQiming He
In this study, we propose and investigate a novel sandwich structure composed of Ni x O/SiN x /Ga 2 O 3 for the purpose of enhancing the forward current density and reducing the on-resistance in β -Ga 2 O 3 diodes. The fabricated sandwich Ga 2 O 3 diode demonstrates an impressive ...
a rhombohedral structure called a corundum structure, demonstrates a unique behavior in the field of power devices, namely, α-Ga2O3 Schottky diodes displays considerably lower on-resistance (0.1 mΩ·cm2) than that of conventional SiC Schottky diodes while retaining a high breakdown voltage (531...
The energy band structure of β-Ga2O3 reveals that it exhibits UWB characteristics as well as almost direct bandgap behavior, both of which are beneficial to a wide range of applications from switching high-power conversion to converting photons to electrons and vice-versa. However, intrinsic β...
there are many factors that remained unclear in formation of GaON from ammonolysis route where a complete Ga2O3 layer growth over GaN crystal was observed22.Hu et al.17 presented a strategy in which they considered 1Center of Research Excellence in Nanotechnology, King Fahd University of Petrole...
power electronics applications. In this article, we present a comprehensive review on the recent progress of the advanced characterization of (AlxGa1−x)2O3using APT that provides direct insight on the atomic-level evolution of (AlxGa1−x)2O3films with varying alloy composition. How the ...
In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with ...
In this review, we intend to systematically summarize the recent progress in the field of lead-free halide perovskite-based photodetectors. Classified according to the detection range are the photodetectors, which are cataloged into four types for discussion, i.e., NIR photodetectors, visible photode...
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminationsdoi:10.1007/s11432-024-4204-9In conclusion, we have proposed a simple yet effective approach by implementing composite-ETs to regulate the E-field at the anode edge to enhance the BV of large-area vertical...