awhich utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper 哪些运用一个高抗拒多电阻器和扩散电阻器引起的一个温度依赖电阻器比率,在本文被提出[translate]...
最大限度地减少了多晶硅层的电阻率的损失和绝缘体上获得高电阻率的硅(HR-SOI)型衬底,其表面是缺乏天然氧化物和污染物。防止下的当衬底被用作基底基板来制造绝缘体上型衬底上的半导体施加的热处理的影响的污染物的扩散。 翻译结果2复制译文编辑译文朗读译文返回顶部 ...
awhich utilizes a temperature-dependent re-sistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper 哪些运用一个高抗拒多电阻器和扩散电阻器引起的一个温度依赖电阻器比率,在本文被提出[translate]...