It was observed that a lateral SBD structure can withstand much higher breakdown voltage compared to the vertical SBD structure, but suffers from significantly higher on-resistance, which can be explained considering the differences in their geometrical configuration. The schottky barrier height was ...
We report the beta-Ga2O3((2) over bar 01)/TiN Schottky barrier diode (SBD) on heterogeneous integrated Ga2O3-Al2O3-Si (GaOISi) substrate. The interface performance of GaOISi/TiN SBD and its dependence on the ambient temperature (T-amb) are characterized. The measured capacitance (C) ...
In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga2O3 with floating metal rings (FMR) was investigated using numerical simulations with Technology Computer-Aided Design (TCAD) software. The simulation parameters of β-Ga2O3, including those in barrier lowering, impact...